SiC MOSFETs

419 SiC MOSFETs from 27 Manufacturers meet your specification.

SiC MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Technology : SiC
Description:1700 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
250 A
Drain Source Breakdown Voltage:
1700 V
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
1350 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High-Power Switching, Motor Controllers (including...
more info
Description:1200 V 3-Phase SiC MOSFET for Inverter Applications
Types of MOSFET:
N-Channel Depletion Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
550 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.53 milli-ohm
Temperature operating range:
-40 to 125 Degree C
Industry:
Commercial, Industrial
Applications:
Inverter Applications
more info
Description:1200 V N-Channel SiC MOSFET for SMPS Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
183 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3L
Industry:
Electric Vehicle, Industrial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
Description:AEC-Q101 Qualified SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 milli-ohm
Power Dissipation:
429 W
Industry:
Automotive
Applications:
EV high-power DC-DC converters, EV charging system...
more info
Description:1700 V Half-Bridge SiC Power Module
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
438 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
3.5 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
50 mW
Temperature operating range:
-40 to 175 Degree C
Applications:
Energy, Medical, Motor & Motion Control, Test and ...
more info
Description:1200 V SiC MOSFET Power Module
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
113 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
18 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
395 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Industrial, Medical, Electric Vehicle
Applications:
Photovoltaic Inverter, Battery charger, Server pow...
more info
Description:1700 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
750 to 1050 milliohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
79 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supplies, Auxiliary Power Suppli...
more info
Description:750 V N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
5.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1153 W
Temperature operating range:
-55 to 175 Degree C
Package:
MO-229
Applications:
Solid state relays and circuit-breakers, Line rect...
more info
Description:1700 V, 49 to 95 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
49 to 95 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
20 to 45 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
569 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V SiC MOSFET for Automotive Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
980 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
1.9 milli-ohm
Gate Source Voltage:
15 V
Temperature operating range:
-40 to 175 degree C
Industry:
Automotive
Applications:
main drive train in xEVs, e-trucks, e-buses, tract...
more info

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