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SiC MOSFETs

390 SiC MOSFETs from 22 Manufacturers meet your specification.

SiC MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Technology : SiC
TW015Z120C,S1F Image
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Toshiba - TW015Z120C,S1F

SiC MOSFET from Toshiba
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Description:N-Channel Silicon Carbide MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
15 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
431 W
Temperature operating range:
-55 to 175 Degree C
Applications:
Switching Voltage Regulators
more info
CMT-PLA3SB12340A Image
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Cissoid - CMT-PLA3SB12340A

SiC MOSFET from Cissoid
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Description:1.7 to 3.5 V, 910 nC, N-Channel Enhancement Mode
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
295 to 340 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
3.25 to 5.15 milliohm
Temperature operating range:
-40 to 125 Degree C
Industry:
Commercial, Industrial
more info
PSMNR67-30YLEX Image
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Nexperia - PSMNR67-30YLEX

SiC MOSFET from Nexperia
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Description:30 V N-Channel Enhancement Mode ASFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
365 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
333 W
Temperature operating range:
-55 to 175 degree C
Package:
SOT1023
Industry:
Commercial, Industrial
Applications:
Hot swap in 12 V - 20 V applications, e-Fuse, DC s...
more info
DMWSH120H28SM4Q Image
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Diodes Incorporated - DMWSH120H28SM4Q

SiC MOSFET from Diodes Incorporated
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Description:AEC-Q101 Qualified SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 milli-ohm
Power Dissipation:
429 W
Industry:
Automotive
Applications:
EV high-power DC-DC converters, EV charging system...
more info
CAB320M17XM3 Image
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Wolfspeed - CAB320M17XM3

SiC MOSFET from Wolfspeed
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Description:1700 V Half-Bridge SiC Power Module
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
438 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
3.5 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
50 mW
Temperature operating range:
-40 to 175 Degree C
Applications:
Energy, Medical, Motor & Motion Control, Test and ...
more info
GP2T040A120U Image
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SemiQ - GP2T040A120U

SiC MOSFET from SemiQ
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Description:1200 V SiC Power MOSFET for UPS & SMPS Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
45 milliohm
Gate Source Voltage:
-5 to 20 V
Power Dissipation:
322 W
Temperature operating range:
-55 to 175 degree C
Package:
TO-247-3L
Industry:
Commercial, Industrial
Applications:
Solar Inverters, Switch mode power supplies, UPS, ...
more info
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WeEN Semiconductors - WNSCM80120W

SiC MOSFET from WeEN Semiconductors
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Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 110 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
230 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supplies, UPS, Solar string inve...
more info
UJ4SC075005L8S Image
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Qorvo - UJ4SC075005L8S

SiC MOSFET from Qorvo
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Description:750 V N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
5.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1153 W
Temperature operating range:
-55 to 175 Degree C
Package:
MO-229
Applications:
Solid state relays and circuit-breakers, Line rect...
more info
G3R20MT17K Image
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GeneSiC Semiconductor - G3R20MT17K

SiC MOSFET from GeneSiC Semiconductor
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Description:1700 V, 49 to 95 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
49 to 95 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
20 to 45 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
569 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
5SFG 0980B12000x Image
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Hitachi - 5SFG 0980B12000x

SiC MOSFET from Hitachi
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Description:1200 V SiC MOSFET for Automotive Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
980 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
1.9 milli-ohm
Gate Source Voltage:
15 V
Temperature operating range:
-40 to 175 degree C
Industry:
Automotive
Applications:
main drive train in xEVs, e-trucks, e-buses, tract...
more info
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