SiC MOSFETs

331 SiC MOSFETs from 17 Manufacturers meet your specification.

SiC MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Technology : SiC
Description:1200 V N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
340 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
4.19 milliohm
Temperature operating range:
175 ÂșC
Industry:
Automotive
Applications:
Electrical vehicle (EV) motor drives, Heavy-duty m...
more info
Description:650 V N-Channel Enhancement Mode SiC Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
120 to 168 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
86 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial
Applications:
Solar inverters, DC/DC converters, Switch Mode Pow...
more info
Description:1200 V N Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
580 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.9 milliohm
Gate Source Voltage:
15 V
Temperature operating range:
-40 to 175 degree C
Industry:
Automotive
Applications:
Main drive drain for xEVs, e-trucks, e-buses, trac...
more info
Description:1200 V N Channel SiC MOSFET for E-Mobility Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
780 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.4 milliohm
Gate Source Voltage:
15 V
Temperature operating range:
-40 to 175 degree C
Industry:
Automotive
Applications:
e-buses, e-trucks, Main drive drain for xEVs, trac...
more info
Description:650 V, 61 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
29 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
120 to 149 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
Description:1200 V, 106 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 125 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
Description:1200 V, 110 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 115 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
Description:1200 V, 27 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
450 to 610 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
Description:1200 V, 62 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 226 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
Description:1200 V, 189 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
45 to 70 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info

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Drain Source Resistance (milliohm)

Gate Source Voltage (V)

Gate Charge (nC)

Power Dissipation (W)

RoHS Compliant

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