What is an N-Channel Depletion Mode MOSFET?
N-Channel Depletion Mode MOSFETs operate equivalent to the “Normally closed” switch. This means that when there is no voltage applied across the gate terminal, the MOSFET is in an ON state.
The N-channel depletion-mode MOSFET is formed by diffusing the two highly doped N+ regions in a lightly doped P-type silicon substrate. One N+ region forms the source terminal, and the other one forms the drain terminal. A thin layer of SiO2 is formed over the surface of this structure, and holes are cut into the SiO2 layer, allowing electrical contact with the source and drain. A thin metal layer of aluminum is formed over the SiO2 layer (between the source and drain terminal) forms the gate terminal of the MOSFET. Also, an N-channel is diffused between the source and drain.
Key features of N Channel Depletion MOSFET:
- Low on-state resistance.
- Fast switching.
- Low input capacitance.
- Low power drive requirement.
- High input impedance and high gain.
N-Channel Depletion Mode MOSFETs are ideal for use in normally-on switches, audio amplifiers, start-up circuits, protection circuits, ramp generators, current regulators, active loads, solid-state relays, converters, analog switches, telecom switches, and power supplies.
N-Channel Depletion Mode MOSFETs from the leading manufacturers are listed on everything PE. Our parametric search tool will scan multiple manufacturer websites to identify N-Channel Depletion Mode MOSFETs that meet your requirement. You can then download datasheets, request quotations via everything PE. Your inquiry will be routed to the manufacturer or their representative who will give you more information on the product.
