What is an N-Channel Enhancement Mode MOSFET?
N-Channel Enhancement Mode MOSFETs operate equivalent to the “Normally Open” switch. This means that the MOSFET does not conduct when there is no voltage applied across the gate terminal.
N-Channel Enhancement Mode MOSFET is formed by diffusing the two highly doped N+ regions in a lightly doped P-type silicon substrate. One N+ region forms the source terminal, and the other one forms the drain terminal. A thin layer of SiO2 is formed over the surface of this structure, and holes are cut into the SiO2 layer, allowing electrical contact with the source and drain. A thin metal layer of aluminum is formed over the SiO2 layer (between the source and drain terminal) forms the gate terminal of the MOSFET.
Key features of N-Channel Enhancement Mode MOSFET:
- Low on-state resistance.
- Fast switching.
- Available in a small package.
N-Channel Enhancement Mode MOSFETs are ideal for use in point-of-load synchronous buck converter for applications in Networking, telecom, and computing systems, optimized for synchronous FET applications, electric power steering, battery switch, start/stop micro-hybrid, heavy loads, SMPS, automotive, DC-DC converter, load switches, battery Switch, battery management, synchronous rectification, POL, switching applications, and automotive.
N-Channel Enhancement Mode MOSFETs from the leading manufacturers are listed on everything PE. Our parametric search tool will scan multiple manufacturer websites to identify N-Channel Enhancement Mode MOSFETs that meet your requirement. You can then download datasheets, request quotations via everything PE. Your inquiry will be routed to the manufacturer or their representative who will give you more information on the product.
