P-Channel Enhancement Mode MOSFETs

2093 P-Channel Enhancement Mode MOSFETs from 20 Manufacturers meet your specification.

Find & Compare P-Channel Enhancement Mode MOSFETs from multiple manufacturers on everything PE. View product specifications, download datasheets and get pricing. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

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  • Types of MOSFET : P-Channel Enhancement Mode
Description:-8 to 8 V, 1.19 to 2.1 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.5 to -0.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1020 to 5000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.265 to 4.025 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1216
Applications:
Relay driver, High-speed line driver, Low-side loa...
more info
Description:-8 to 8 V, 1.19 to 2.1 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.5 to -0.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1020 to 5000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.265 to 4.025 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1216
Applications:
Relay driver, High-speed line driver, Low-side loa...
more info
Description:-8 to 8 V, 27 to 40 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-16.7 to -7.6 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
8.4 to 20 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.9 to 12.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1220-2
Applications:
Charging switch for portable devices, DC-to-DC con...
more info
Description:-8 to 8 V, 32 to 46 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-15 to -6.6 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
9.5 to 75 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.9 to 12.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1220-2
Applications:
Charging switch for portable devices, DC-to-DC con...
more info
Description:-8 to 8 V, 26 to 39 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-14 to -6.1 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
11.2 to 64 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.9 to 12.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1220-2
Applications:
Charging switch for portable devices, DC-to-DC con...
more info
Description:-20 to 20 V, 29 to 44 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-12.5 to -5.6 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
12.5 to 24 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.9 to 12.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1220-2
Applications:
Charging switch for portable devices, DC-to-DC con...
more info
Description:-20 to 20 V, 33 to 49 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-12.3 to -5.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
12.7 to 25 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.9 to 12.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1220-2
Applications:
Charging switch for portable devices, DC-to-DC con...
more info
Description:-8 to 8 V, 26 to 39 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-13 to -5.8 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
13 to 80 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2 to 12.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1220
Applications:
Charging switch for portable devices, DC-to-DC con...
more info
Description:-20 to 20 V, 26.6 to 40 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-12 to -5.4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
14 to 26 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.9 to 12.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1220-2
Applications:
Charging switch for portable devices, DC-to-DC con...
more info
Description:-20 to 20 V, 29 to 44 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11.2 to -5.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
14.5 to 30 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.9 to 12.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT1220-2
Applications:
Charging switch for portable devices, DC-to-DC con...
more info

What is a P-Channel Enhancement Mode MOSFET?

P-Channel Depletion Mode MOSFETs operate equivalent to the “Normally Open” switch. This means that the MOSFET does not conduct when there is no voltage applied across the gate terminal.


P-Channel Enhancement Mode MOSFET is formed by diffusing the two highly doped P+ regions in a lightly doped N-type silicon substrate. One P+ region forms the source terminal, and the other one forms the drain terminal. A thin layer of SiO2 is formed over the surface of this structure, and holes are cut into the SiO2 layer, allowing electrical contact with the source and drain. A thin metal layer of aluminum is formed over the SiO2 layer (between the source and drain terminal) forms the gate terminal of the MOSFET.

Key features of P-Channel Enhancement Mode MOSFET:

  • Low on-state resistance.
  • Fast switching.
  • High thermal power dissipation capability.
  • Low package inductance.
  • Built-in gate protection diode.

P-Channel Enhancement Mode MOSFETs are ideal for use in automotive, high current switching applications, load switch, DC motor control, DC-AC inverters, solenoids, audio outputs, high-efficiency bridge rectifiers, power management functions, DC to DC conversion, high-speed line driver, battery protection, push-pull amplifiers, DC choppers, current regulators, and automatic test equipment.

P-Channel Enhancement Mode MOSFETs from the leading manufacturers are listed on everything PE. Our parametric search tool will scan multiple manufacturer websites to identify P-Channel Enhancement Mode MOSFETs that meet your requirement. You can then download datasheets, request quotations via everything PE. Your inquiry will be routed to the manufacturer or their representative who will give you more information on the product.

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