MOSFETs - Page 10

18088 MOSFETs from 60 Manufacturers meet your specification.
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
130 to 160 milliohm
Gate Source Voltage:
-5 to 20 V
Power Dissipation:
115 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-3L
Industry:
Commercial, Industrial
Applications:
Switch Mode Power Supplies, Solar Inverters, DC/DC...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.8 to 20.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
62 to 183 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220 Fullpak
Industry:
Commercial, Industrial
Applications:
Power Factor Correction, Server Power Supplies, Te...
more info
Description:1200, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
300 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
4.5 to 6.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1190 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
AC Motor control, Motion servo control, Power Supp...
more info
Description:800 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
800 to 950 milliohm
Gate Source Voltage:
30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power Factor Correction, Alternative energy invert...
more info
Description:500 V, 24.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
600 to 900 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
ITO-220
Industry:
Commercial, Industrial
Applications:
Power Supply, AC/DC LED Lighting
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.17 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6000 to 10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.36 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Signal processing, Battery management Drivers, Log...
more info
Description:-100 V, -2.7 to -9.5 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.7 to -9.5 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
135 to 150 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.13 W
Temperature operating range:
-55 to 150 Degree C
Package:
PMPAK-3x3
Industry:
Industrial, Commercial
more info
Description:60 V, 11.7 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.7 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
0.08 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18 LCC
Industry:
Industrial, Commercial, Military
Applications:
Space equipment and systems, Military equipment an...
more info
Description:1200 V, 33 to 47 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 47 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
65 to 110 milli-ohm
Gate Source Voltage:
-8 to 22 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supplies (SMPS), Power Inverter ...
more info
Description:60 V, -85 to 85 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-85 to 85 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4 to 4.7 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO3P-3L
Industry:
Industrial, Commercial, Automotive
Applications:
Electric power steering, High current switching
more info

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