MOSFETs - Chassis Mount - Page 14

138 MOSFETs from 4 Manufacturers meet your specification.
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  • Package Type : Chassis Mount
Description:-30 to 30 V, 240 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
90 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
49 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
1040 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227 B
Applications:
DC-DC converters, Battery chargers, Switched-mode ...
more info
Description:-30 to 30 V, 150 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
270 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
625 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
Description:-30 to 30 V, 150 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
85 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
625 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227 B
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
Description:-20 to 20 V, 258 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
138 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
18 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227 B
Applications:
DC-DC converters, Battery chargers, Switched-mode ...
more info
Description:-30 to 30 V, 255 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
695 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227 B
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
Description:-20 to 20 V, 255 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
188 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
10.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1070 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-227
Applications:
DC-DC converters, Battery chargers, Switched-mode ...
more info
Description:-30 to 30 V, 197 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
390 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
595 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227 B
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
Description:-30 to 30 V, 240 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
72 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
75 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
1040 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Applications:
DC-DC converters, Battery chargers, Switched-mode ...
more info

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