MOSFETs - Page 5

18088 MOSFETs from 60 Manufacturers meet your specification.
Description:1200 V, 33 to 47 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 47 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
65 to 110 milli-ohm
Gate Source Voltage:
-8 to 22 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supplies (SMPS), Power Inverter ...
more info
Description:40 V, -70 to 70 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-70 to 70 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5 to 6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220F-3L
Industry:
Industrial, Commercial, Automotive
Applications:
EPS motor driver application
more info
Description:1200 V SiC Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
25 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
446 W
Temperature operating range:
-55 to 175 Degree C
Applications:
EV Fast Charging Modules, EV On Board Chargers, So...
more info
Description:12 V, 2.3 to 4.1 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.3 to 4.1 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
47 to 210 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.34 to 1.10 W
Temperature operating range:
-40 to 85 Degree C
Package:
CSP
Industry:
Industrial, Commercial
more info
Description:1000 V, 10 A, N-Channel Enhancement Mode HERMETIC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
1.2 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
350 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254
Industry:
Industrial, Commercial
more info
Description:20 V, 4.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
16 to 30 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Load Switch for Portable Devices, Voltage Controll...
more info
Description:75 V, 70 to 80 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 to 80 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
6.5 to 13 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
Description:40 V, 60 to 80 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 to 80 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.2 to 3.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
Description:30 V, 8.2 to 30 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.2 to 30 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
15 to 30 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Power switching application, Hard switched and hig...
more info
Description:-20 to 20 V, -1.6 to -2 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.6 to -2 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
200 to 300 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.56 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Motor Drive, Power Tools, LED Lighting
more info

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