MOSFETs - Page 5

2942 MOSFETs from 2 Manufacturers meet your specification.
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  • Manufacturers : Vishay, Diodes Incorporated
Description:25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
2.3 to 3.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
69 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
DC/DC conversion - Low side switch, Notebook, Serv...
more info
Description:-20 to 20 V, 4 to 7.8 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
56 to 120 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.08 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Power management functions, Analog Switch, Load Sw...
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-50 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8.8 to 21.3 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Notebook battery charging, Notebook adapter switch...
more info
Description:-12 to 12 V, 0.35 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.22 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
1800 to 10000 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.36 W
Temperature operating range:
-55 to 150 Degree C
Package:
X2-DFN0806-6
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
44.4 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7.9 to 12.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
33.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
Description:-25 to 25 V, 0.62 to 1.25 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2400 to 4000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
X1-DFN1006-3
Applications:
Load Switch, Portable Applications, Power Manageme...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.6 to 9.7 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
29.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
DC/DC Conversion, High Current Power Rails in Comp...
more info
Description:-20 to 20 V, 5.2 to 11 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.9 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
50 to 95 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.8 to 5 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
High power density DC/DC, Synchronous rectificatio...
more info
Description:-20 to 20 V, 66 to 139 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-13.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
7500 to 12000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.36 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI5060-8
Applications:
Notebook Battery Power Management, DC-DC Converter...
more info

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