Single Channel MOSFETs - Page 5

16258 Single Channel MOSFETs from 57 manufacturers meet your specification.
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  • Number of Channels : Single
Description:40 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
Description:-5 to 20 V, 58 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
58 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
50 to 80 milli-ohm
Gate Source Voltage:
-5 to 20 V
Power Dissipation:
327 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial, Commercial
Applications:
SOLAR INVERTERS, UPS, MOTOR DRIVERS, HIGH VOLTAGE ...
more info
Description:40 V, 14 to 23.6 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 to 23.6 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
28 to 38 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
31.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
Description:100 V, 8 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
0.195 Ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205
Industry:
Industrial, Commercial, Military
Applications:
Used in control and sensing applications
more info
Description:-20 V, -6.8 to -8.5 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.8 to -8.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
12 to 22 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
more info
Description:40 to 60 V, 0.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
40 to 60 V
Drain Source Resistance:
0.6 to 0.8 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
Switching
more info
Description:100 V, 85 to 135 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 to 135 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.4 to 4.1 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
240 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Networking, Load Switch, LED applications, Quick C...
more info
Description:Radiation-Tolerant N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
62 to 98 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
16.7 to 35 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
390 W
Temperature operating range:
-40 to 125 Degree C
Package:
TO247
Industry:
Industrial, Commercial
Applications:
Power conditioning unit, Power distribution unit, ...
more info
Description:40 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
795 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.34 to 0.47 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
536 W
Temperature operating range:
-55 to 175 Degree C
Package:
PowerPAK
Industry:
Commercial, Industrial
Applications:
Synchronous rectification, Automation, OR-ing and ...
more info
Description:600 V Automotive Qualified N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
99 milli-ohm
Gate Source Voltage:
30 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 150 Degree C
Package:
H²PAK-2
Industry:
Automotive
Applications:
High efficiency switching applications
more info

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