Single Channel MOSFETs - Page 6

16258 Single Channel MOSFETs from 57 manufacturers meet your specification.
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  • Number of Channels : Single
Description:100 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
460 A
Drain Source Breakdown Voltage:
90 to 100 V
Drain Source Resistance:
0.99 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.55 kW
Temperature operating range:
-55 to 175 Degree C
Package:
CCPAK1212 (SOT8000A)
Industry:
Commercial, Industrial
Applications:
Battery protection, High power full and half-bridg...
more info
Description:100 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
197 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN
Industry:
Commercial, Industrial
Applications:
Telecom, Solar, DC-DC
more info
Description:AEC-Q101 Qualified N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
±340 A
Drain Source Resistance:
1.3 to 1.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
468 W
Temperature operating range:
-55 to 175 Degree C
Package:
TOLG
Industry:
Automotive, Industrial, Commercial
Applications:
Small Traction (2-wheel, 3-wheel vehicle), 48V loa...
more info
Description:-20 to 20 V, 174 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
323 to 457 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
0.69 to 1.26 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
325 W
Temperature operating range:
-55 to 175 Degree C
Package:
H-PSOF8L
Industry:
Commercial, Industrial
Applications:
Synchronous Rectification (SR) in DC-DC and AC-DC,...
more info
Description:-8 to 19 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
53 to 74 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
23 to 55 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
341 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7XL
Industry:
Automotive, Industrial, Commercial
Applications:
Motor Control, EV Battery Chargers, High Voltage D...
more info
Description:-12 V, P-Channel Depletion Mode MOSFET
Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.1 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
57 to 290 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.3 W
Temperature operating range:
-40 to 85 Degree C
Industry:
Industrial, Commercial
Applications:
General Switching
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 220 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
155 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supplies, UPS, Solar string inve...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.7 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
150 to 170 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
14 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC4
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-220 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.12 to -0.26 A
Drain Source Breakdown Voltage:
-220 V
Drain Source Resistance:
8000 to 15000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.36 to 1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23, SOT-89
Industry:
Commercial, Industrial
Applications:
Logic-Level Interfaces (Ideal for TTL and CMOS), S...
more info
Description:750 V N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
5.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1153 W
Temperature operating range:
-55 to 175 Degree C
Package:
MO-229
Applications:
Solid state relays and circuit-breakers, Line rect...
more info

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