MOSFETs - Page 9

18088 MOSFETs from 60 Manufacturers meet your specification.
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
48 to 90 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
PWM applications - Load switch - Power management
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.08 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
25000 to 10000000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Low overhead current mirrors and current sources, ...
more info
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
75 to 250 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Notebook PCs, Cellular and portable phones, On-boa...
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.6 to 2.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
88 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5X6-8L
Industry:
Automotive
Applications:
DC/DC Converter, Ideal for high-frequency switchin...
more info
Description:150 V, 27 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
38 to 47 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
66 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN56
Industry:
Industrial, Commercial
Applications:
Specifically for Syncronous Rectification, Switchi...
more info
Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
900 to 6000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Commercial, Military
more info
Description:750 V, 22 to 43 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 to 43 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
60 to 78 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
171 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV /HEV Charging, DC...
more info
Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.78 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1950 to 2300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
44.6 to 100 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220, TO-220F, TO-251, TO-252
Industry:
Industrial, Commercial
Applications:
High frequency switching mode power supply, Uninte...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
33 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
10 to 17.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Automotive
more info
Description:1200 V N Channel SiC MOSFET for E-Mobility Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
780 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.4 milliohm
Gate Source Voltage:
15 V
Temperature operating range:
-40 to 175 degree C
Industry:
Automotive
Applications:
e-buses, e-trucks, Main drive drain for xEVs, trac...
more info

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