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Power Diodes from Manufacturers in Japan - Page 19

1,560 Power Diodes from 8 manufacturers meet your specification.
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1,560 Power Diodes from 8 Manufacturers
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Page 19 of 104
RFN20TJ6S Image
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ROHM Semiconductor - RFN20TJ6S

Power Diode from ROHM Semiconductor
1.0 to 1.55 V, 20 A, Fast Recovery Diode

Product Specs

Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Single Diode
Forward Current:
20 A
Forward Voltage:
1.0 to 1.55 V
Reverse Current:
0.1 to 200 uA
Reverse Voltage:
600 V
Repetitive Peak Reverse Voltage:
600 V
Non-Repetitive Peak Forward Current:
150 A
Recovery Time:
40 to 60 ns
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive, Commercial, Industrial
RoHS Compliant:
Yes
Applications:
General Rectification
Package:
TO-220ACFP
more info
HN2S01FU Image
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Toshiba - HN2S01FU

Power Diode from Toshiba
0.50 V, 0.1 A, Schottky Power Diode

Product Specs

Types of Diode:
Schottky Barrier Diode
Configuration of Diode:
Triple Diode
Technology:
Silicon
Forward Current:
0.1 A
Forward Voltage:
0.50 V
Reverse Current:
20 uA
Reverse Voltage:
10 V
Repetitive Peak Reverse Voltage:
15 V
Non-Repetitive Peak Forward Current:
1 A
Temperature operating range:
-40 to 100 Degree C
Industry:
Industrial, Commercial
RoHS Compliant:
Yes
Applications:
Low VF, High Speed Switching.
Package:
SOT-363
Dimensions:
2.0 x 2.1 x 0.9 mm
more info
RFN6T2DNZ Image
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ROHM Semiconductor - RFN6T2DNZ

Power Diode from ROHM Semiconductor
0.90 to 0.98 V, 6 A, Fast Recovery Diode

Product Specs

Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Dual Diode
Forward Current:
6 A
Forward Voltage:
0.90 to 0.98 V
Reverse Current:
10 uA
Reverse Voltage:
200 V
Repetitive Peak Reverse Voltage:
200 V
Non-Repetitive Peak Forward Current:
40 A
Recovery Time:
12 to 25 ns
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive, Commercial, Industrial
RoHS Compliant:
Yes
Applications:
General Rectification
Package:
TO-220FN
more info
CMF02A Image
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Toshiba - CMF02A

Power Diode from Toshiba
2.0 V, 1.0 A, Fast Recovery Diode

Product Specs

Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Single Diode
Technology:
Silicon
Forward Current:
1.0 A
Forward Voltage:
2.0 V
Reverse Current:
50 uA
Repetitive Peak Reverse Voltage:
600 V
Non-Repetitive Peak Forward Current:
10 A
Temperature operating range:
-55 to 150 Degree C
Industry:
Industrial, Commercial
RoHS Compliant:
Yes
Applications:
High- speed Rectification
Package:
M-FLAT
Dimensions:
2.4 x 4.7 x 0.98 mm
more info
RF2001NS2DFH Image
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ROHM Semiconductor - RF2001NS2DFH

Power Diode from ROHM Semiconductor
0.86 to 0.93 V, 20 A, Fast Recovery Diode

Product Specs

Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Dual Diode
Forward Current:
20 A
Forward Voltage:
0.86 to 0.93 V
Reverse Current:
0.01 to 10 uA
Reverse Voltage:
200 V
Repetitive Peak Reverse Voltage:
200 V
Non-Repetitive Peak Forward Current:
100 A
Recovery Time:
20 to 30 ns
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive, Commercial, Industrial
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Applications:
General Rectification
Package:
TO-263S
more info
HN2S04FU Image
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Toshiba - HN2S04FU

Power Diode from Toshiba
0.42 V, 0.2 A, Schottky Power Diode

Product Specs

Types of Diode:
Schottky Barrier Diode
Configuration of Diode:
Triple Diode
Technology:
Silicon
Forward Current:
0.2 A
Forward Voltage:
0.42 V
Reverse Current:
50 uA
Reverse Voltage:
20 V
Repetitive Peak Reverse Voltage:
25 V
Non-Repetitive Peak Forward Current:
1 A
Temperature operating range:
-40 to 100 Degree C
Industry:
Industrial, Commercial
RoHS Compliant:
Yes
Applications:
High -speed Switching.
Package:
SOT-363
Dimensions:
2.0 x 2.1 x 0.9 mm
more info
RF1601NS2D Image
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ROHM Semiconductor - RF1601NS2D

Power Diode from ROHM Semiconductor
0.85 to 0.93 V, 16 A, Fast Recovery Diode

Product Specs

Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Dual Diode
Forward Current:
16 A
Forward Voltage:
0.85 to 0.93 V
Reverse Current:
0.01 to 10 uA
Reverse Voltage:
200 V
Repetitive Peak Reverse Voltage:
200 V
Non-Repetitive Peak Forward Current:
100 A
Recovery Time:
18 to 30 ns
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive, Commercial, Industrial
RoHS Compliant:
Yes
Applications:
General Rectification
Package:
TO-263S
more info
TBAT54 Image
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Toshiba - TBAT54

Power Diode from Toshiba
0.58 V, 0.2 A, Schottky Power Diode

Product Specs

Types of Diode:
Schottky Barrier Diode
Configuration of Diode:
Single Diode
Technology:
Silicon
Forward Current:
0.2 A
Forward Voltage:
0.58 V
Reverse Current:
2 uA
Reverse Voltage:
30 V
Repetitive Peak Reverse Voltage:
35 V
Non-Repetitive Peak Forward Current:
1 A
Temperature operating range:
-55 to 150 Degree C
Industry:
Industrial, Commercial
RoHS Compliant:
Yes
Applications:
Low leakage current
Package:
SOT-23
Dimensions:
2.9 x 2.4 x 0.9 mm
more info
RFV5BM6S Image
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ROHM Semiconductor - RFV5BM6S

Power Diode from ROHM Semiconductor
1.5 to 2.8 V, 5 A, Fast Recovery Diode

Product Specs

Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Single Diode
Forward Current:
5 A
Forward Voltage:
1.5 to 2.8 V
Reverse Current:
0.03 to 200 uA
Reverse Voltage:
600 V
Repetitive Peak Reverse Voltage:
600 V
Non-Repetitive Peak Forward Current:
60 A
Recovery Time:
12 to 40 ns
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive, Commercial, Industrial
RoHS Compliant:
Yes
Applications:
General Rectification
Package:
TO-252
more info
CUS10F40 Image
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Toshiba - CUS10F40

Power Diode from Toshiba
0.67 V, 1 A, Schottky Power Diode

Product Specs

Types of Diode:
Schottky Barrier Diode
Configuration of Diode:
Single Diode
Technology:
Silicon
Forward Current:
1 A
Forward Voltage:
0.67 V
Reverse Current:
20 uA
Reverse Voltage:
40 V
Non-Repetitive Peak Forward Current:
5 A
Temperature operating range:
-55 to 150 Degree C
Industry:
Industrial, Commercial
RoHS Compliant:
Yes
Applications:
High Breakdown Voltage, Low leakage current, High ...
Package:
SOD-323
Dimensions:
2.5 x 1.25 x 0.9 mm
more info
RFUH20NS4S Image
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ROHM Semiconductor - RFUH20NS4S

Power Diode from ROHM Semiconductor
1.5 to 1.7 V, 20 A, Fast Recovery Diode

Product Specs

Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Single Diode
Forward Current:
20 A
Forward Voltage:
1.5 to 1.7 V
Reverse Current:
0.05 to 10 uA
Reverse Voltage:
430 V
Repetitive Peak Reverse Voltage:
430 V
Non-Repetitive Peak Forward Current:
100 A
Recovery Time:
18 to 25 ns
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive, Commercial, Industrial
RoHS Compliant:
Yes
Applications:
General Rectification
Package:
TO263S
more info
JDH2S02SL Image
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Toshiba - JDH2S02SL

Power Diode from Toshiba
0.24 V, 0.01 A, Schottky Power Diode

Product Specs

Types of Diode:
Schottky Barrier Diode
Configuration of Diode:
Single Diode
Technology:
Silicon
Forward Current:
0.01 A
Forward Voltage:
0.24 V
Reverse Current:
25 uA
Reverse Voltage:
10 V
Temperature operating range:
-55 to 125 Degree C
Industry:
Industrial, Commercial
RoHS Compliant:
Yes
Applications:
VHF, UHF MIX, Radio Frequency power Detectorts
Package:
SOD-962
Dimensions:
0.62 x 0.32 x 0.3 mm
more info
RF081L2STF Image
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ROHM Semiconductor - RF081L2STF

Power Diode from ROHM Semiconductor
0.85 to 0.98 V, 1.1 A, Fast Recovery Diode

Product Specs

Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Single Diode
Forward Current:
1.1 A
Forward Voltage:
0.85 to 0.98 V
Reverse Current:
0.01 to 10 uA
Reverse Voltage:
200 V
Repetitive Peak Reverse Voltage:
200 V
Non-Repetitive Peak Forward Current:
25 A
Recovery Time:
12 to 25 ns
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive, Commercial, Industrial
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Applications:
General Rectification
Package:
SOD-106
more info
CUS10F30 Image
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Toshiba - CUS10F30

Power Diode from Toshiba
0.5 V, 1 A, Schottky Power Diode

Product Specs

Types of Diode:
Schottky Barrier Diode
Configuration of Diode:
Single Diode
Technology:
Silicon
Forward Current:
1 A
Forward Voltage:
0.5 V
Reverse Current:
50 uA
Reverse Voltage:
30 V
Non-Repetitive Peak Forward Current:
5 A
Temperature operating range:
-55 to 125 Degree C
Industry:
Industrial, Commercial
RoHS Compliant:
Yes
Applications:
High current, Low VF, High-speed Switching.
Package:
SOD-323
Dimensions:
2.5 x 1.25 x 0.9 mm
more info
RFUH10TB4SNZ Image
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ROHM Semiconductor - RFUH10TB4SNZ

Power Diode from ROHM Semiconductor
1.4 to 1.7 V, 10 A, Fast Recovery Diode

Product Specs

Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Single Diode
Forward Current:
10 A
Forward Voltage:
1.4 to 1.7 V
Reverse Current:
10 uA
Reverse Voltage:
430 V
Repetitive Peak Reverse Voltage:
430 V
Non-Repetitive Peak Forward Current:
80 A
Recovery Time:
15 to 25 ns
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive, Commercial, Industrial
RoHS Compliant:
Yes
Applications:
General Rectification
Package:
TO-220FN
more info
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