Using Enhancement Mode GaN-on-Silicon Power FETs (eGaN FETs)

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  • Author: Johan Strydom, David Reusch, Steve Colino, Alana Nakata
Efficient Power Conversion Corporation’s (EPC) hyper-fast enhancement mode Gallium Nitride (GaN) power transistors offer performance improvements well beyond the realm of silicon-based power MOSFETs. Standard power converter topologies can greatly benefit from the added performance and leap to performance not attainable with current MOSFET designs; improving converter efficiency, while maintaining the simplicity of converter designs. Using eGaN FETs is very similar to using modern power MOSFETs. However, due to the significantly better performance, there are additional design and test considerations to make certain devices are used efficiently and reliably.
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