Paralleling GaN HEMTs for Diode-free Bridge Power Converters

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  • Author: Zhan Wang, Yifeng Wu, Jim Honea, Liang Zhou

Paralleling semiconductor devices is an effective and simple way for higher power application. It is very challenging to parallel GaN HEMTs in hard-switching bridge power converter application, especially for discrete leaded package devices. However, leaded packages are still dominant in industrial applications because of their simplicity for PCB assembly and capability for a wide variety of heat-sinking techniques. In this paper, a solution to paralleling GaN HEMTs for diode-free bridge power converters is proposed, and GaN device driver design is discussed.

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