High Voltage GaN Switch Reliability

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  • Author: Ronald Barr, Jeff Haller, Ken Shono, Elena Georgieva, Jim McKay, Peter Smith, Rakesh Lai, Yifeng Yu, Kurt Smith
Adoption of any semiconductor technology by the power conversion market requires an understanding offundamental failure modes, acceleration factors, and reliability statistics. In this paper we will show how GaN products from Transphorm can meet this challenge, especially in the critical High Voltage Off State (HVOS) reliability stress test. This paper will discuss the methods developed for measuring GaN reliability on large samples which are wholly based on existing industrial and automotive standards. Further, the paper will discuss how the resulting data can be used to supplement qualification testing results when the failure modes and acceleration factors are well understood.
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