Driving the adoption of High-Voltage gallium nitride Field-Effect transistors

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  • Author: Primit Parikh

High-voltage (HV) gallium nitride (GaN)-650-950 V-field-effect transistors (FETs) are becoming the next standard for power conversion. They provide cost-competitive, easy-to-embed solutions that reduce energy loss by more than 50%, shrink system size by more than 40%, and simplify power converter/inverter design and manufacturing. These benefits are being realized today in various markets, including consumer, industrial, server, servo motors and drives, solar, telecommunications, and electric vehi-cles. So what is driving this current industry momentum, and what more remains to be done to further quicken this adoption?

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