GaN Offers Advantages to Future HEV

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  • Author: Yifeng Wu

This paper discusses (1) GaN’spotential as an efficient kV-class devices (2) GaN-on-Si HEMT Performance and robustness (3) High temperature operation (4) Device paralleling for extended power (5) GaNdiode-free hard-switched bridges (6) Motor drive system benefits from GaN

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