CoolGaN™ ? the new power paradigm

Compared to silicon (Si), the breakdown field of Infineon’s CoolGaN™ enhancement mode (e-mode) HEMTs is ten times higher and the electron mobility is double. Both the output charge and gate charge are ten times lower than with Si and the reverse recovery charge is almost zero which is key for high frequency operations. GaN is the suitable technology of choice in hard switching as well as resonant topologies, and is enabling new approaches in current modulation.
Please note: By downloading a white paper, the details of your profile might be shared with the creator of the content and you may be contacted by them directly.