CoolGaN™ ? the new power paradigm
Compared to silicon (Si), the breakdown field of Infineon’s CoolGaN™ enhancement mode (e-mode) HEMTs is ten times higher and the electron mobility is double. Both the output charge and gate charge are ten times lower than with Si and the reverse recovery charge is almost zero which is key for high frequency operations. GaN is the suitable technology of choice in hard switching as well as resonant topologies, and is enabling new approaches in current modulation.
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