Driving CoolGaN™ 600 V high electron mobility transistors

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  • Author: Bernhard Zojer
This document deals with the preferred driving scheme for Infineon’s first-generation 600 V e-mode gallium nitride (GaN) transistor, a p-GaN-type switch with non-isolated gate, referred to here as CoolGaN™ 600 V High Electron Mobility Transistor (HEMT). A driving concept based on Infineon’s driver IC 1EDI20N12AF together with a dedicated coupling network is described and thoroughly analyzed. Both physical GaN properties and application-specific considerations are taken into account. Theory and simulation results are shown to be in agreement with the measurements.
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