CoolSiC™ MOSFET technology: a revolution for power conversion

Download Whitepaper
  • Author: Dr. Peter Friedrichs
Silicon carbide (SiC) transistors are increasingly used in power converters, placing high demands on the size, weight and/or efficiency. MOSFETs have been meanwhile commonly accepted to be the concept of choice. Initially, JFET structures seemed to be the ultimate choice for merging performance and reliability in a SiC transistor. However, with the now established 150 mm wafer technology, trench-based SiC MOSFETs have also become feasible, and thus, the DMOS dilemma of having either performance or high reliability could now be solved.
Please note: By downloading a white paper, the details of your profile might be shared with the creator of the content and you may be contacted by them directly.