eGaN FETs Deliver the Performance of GaN at the Price of Silicon
A new line of eGaN FETs is now available that are not only much faster and smaller than power MOSFETs with similar on-resistance and voltage ratings, but these new transistors are priced favorably at comparable volumes. This is the first time in 60 years that there has been a non-silicon technology that has both superior performance and price compared with their silicon-based counterpart. It’s not a fluke; since launching in 2010, EPC has been manufacturing GaN devices with steadily improving performance.
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