Origins of SiC FETs and Their Evolution Towards the Perfect Switch
Wide band-gap semiconductors as high-frequency switches are enablers for better efficiency in power conversion. One example, the silicon carbide switch can be implemented as a SiC MOSFET or in a cascode configuration as a SiC FET. This white paper traces the origins and evolution of the SiC FET to its latest generation and compares its performance with alternative technologies.
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