SiC MOSFETs: Gate Drive Optimization

Understanding and optimizing the gate drive circuitry has a profound effect on reliability and the overall switching performance that can be achieved. This whitepaper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance will be described. System-level considerations such as start−up, fault protection, and steady-state switching will also be discussed.

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