eGaN FETs and ICs for Time-of-Flight/Lidar
GaN transistors and integrated circuits are a vital element in the “eyes” of autonomous vehicles, robotics, and drones by powering the lasers used in Time of Flight(ToF)/lidar systems. eGaN FETs and ICs create the high-current pulses with extremely short pulse widths required for higher resolution, longer range, and safer ToF/Lidar systems. These benefits along with the extremely small size and low cost, make GaN the ideal solution for helping all ranges of lidar systems see farther, faster, and better.
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