The Advanced Trench HiGT with Seperate Floating p-Layer for Easy Controllability and Robustness
With the trend in power electronics demands, IGBTs have been improved. IGBTs have planar MOS gates and trench MOS gates, and the latter are used in the miniature processes and are mainly produced with mid-range voltages and high current density. In this whitepaper, an advanced trend HiGT chip structure and characteristics are proposed.
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