How to parallel CoolGaN 600 V HEMT in half bridge configurations for higher-power applications

This whitepaper presents design considerations, the setup, and results from the half-bridge evaluation board when paralleling CoolGAN 600 V HEMTs. The board features four 70 mΩ GaN power transistors, a pair of 1EDI EiceDRIVER compact gate drivers, along with input logic that provides adjustable dead-time.

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