Measurement Techniques for High-Speed GaN E-HEMTs

GaN E-HEMTs have a significantly faster switching speed than Si and SiC MOSFETs. This application note provides details on how to accurately characterize the performance of high speed GaN E-HEMTs so that designers can release optimized designs. An overview of proper current and voltage measurement techniques is presented for obtaining test results that accurately reflect the performance of GaN devices.
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