Design Considerations of Paralleled GaN HEMTs

Paralleling of switches is necessary in high power applications such as traction inverters, renewable energy systems etc. This application note provides details on the design considerations of GaN FETs in parallel so that designers can release optimized designs and achieve the best system performance. The benefits of paralleling GaN are discussed. The characteristics of GaN are analyzed and show that GaN is inherently fit for paralleling.
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