The BM3G015MUV-LBE2 from ROHM Semiconductor is a GaN HEMT Power Stage IC that has been designed to guarantee long-time support in industrial markets. It requires an input voltage of 6.25 - 30 V. This PMIC offers a wide input voltage operating range with its low quiescent voltage, operating current, and propagation delay, thereby providing an optimum solution for all electronics systems that require high power density and efficiency. It is integrated with a 650 V enhancement GaN HEMT transistor and a Silicon driver to reduce the parasitic inductance caused by PCB and wire bonding. This RoHS-compliant power stage delivers adjustable gate drive strength that contributes to low EMI while providing good signal output. It is also equipped with under-voltage lockout (UVLO) and thermal shutdown protection in a cost-effective package to prevent false triggers and over-temperature-related damages. This power stage IC is available in a surface-mount package that measures 8 x 8 x 1 mm and is ideal for industrial equipment, power supplies with high power density, high-efficiency demand, or bridge topologies such as totem-pole PFC, LLC power supply, and adapter applications.
