513 GaN Power Transistors
from
22 Manufacturers
513 Products
from
22 Manufacturers
Page 1 of 34
What is a GaN Power Transistor?
A GaN Power Transistor is a wide-bandgap semiconductor switching device based on gallium nitride technology, enabling high-efficiency power conversion through fast switching and low conduction losses. The device operates using a field-effect mechanism where an applied gate voltage modulates a conductive channel between the drain and source terminals, allowing precise control of current flow.
GaN Power Transistors are used in high-frequency and high-power-density applications due to their reduced parasitic capacitances and superior electron mobility compared to silicon-based devices. Their performance is strongly influenced by gate charge behavior, capacitance characteristics, and switching timing parameters, which together determine efficiency, switching losses, and electromagnetic compatibility.
Key Specifications
- Gate Threshold Voltage: Defines the minimum gate-to-source voltage required to initiate channel conduction, influencing gate drive design and noise immunity.
- Drain Source Voltage: Specifies the maximum voltage the device can block between drain and source when in the off-state, determining suitability for a given bus voltage.
- Drain Source Resistance: Represents the on-state resistance of the conductive channel, directly affecting conduction losses and thermal performance.
- Continuous Drain Current: Indicates the maximum drain current the device can conduct continuously under specified thermal conditions, impacting steady-state power handling.
- Pulsed Drain Current: Defines the allowable peak drain current for short-duration pulses, relevant for transient and dynamic load conditions.
- Total Charge: Describes the total gate charge required to transition the device between off and on states, influencing gate drive losses and switching speed.
- Input Capacitance: Represents the effective capacitance seen at the gate terminal, affecting drive requirements and turn-on dynamics.
- Output Capacitance: Defines the capacitance associated with the drain–source terminals, influencing voltage transition behavior and switching losses.
- Turn-on Delay Time: Specifies the time interval between the application of the gate drive signal and the onset of drain current conduction.
- Turn-off Delay Time: Defines the delay between removal of the gate drive signal and the cessation of drain current, impacting switching timing and efficiency.
The Largest Database of GaN Power Transistors
everything PE has listed GaN Power Transistors from the leading manufacturers and made them searchable by specification. You can enter the key parameters and the search tool will scan catalogs from the leading manufacturers to identify products that meet your spec. Once you find a GaN Power Transistor that meets your requirement, you can view product information, download datasheets or request quotations. Quotation requests will be routed to the manufacturer of the product, who will get back to you directly. The quotation will also be routed to distributors of the product in your region.
