GaN Power Transistors

187 GaN Power Transistors from 17 manufacturers listed on everything PE

A GaN transistor is a type of power transistor that uses Gallium Nitride as a semiconductor material to provide high power, high speed, and high-frequency switching capabilities. GaN Power Transistors from the leading manufacturers are listed on everything PE. Narrow down on products based on configuration, gate threshold voltage, package type, etc. View product specifications, download datasheets and get pricing. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

Description:650 V Enhancement Mode GaN Power Transistor
Gate Threshold Voltage:
1.2 to 2.6 V
Drain Source Voltage:
650 to 750 V
Drain Source Resistance:
75 to 185 milli-ohm
Continous Drain Current:
9 to 15 A
Pulsed Drain Current:
36 A
Total Charge:
3 nC
Input Capacitance:
125 pF
Output Capacitance:
50 pF
Turn-on Delay Time:
4.1 ns
Turn-off Delay Time:
8.9 ns
Rise Time:
6 ns
Fall Time:
9.7 ns
Package Type:
Surface Mount
Applications:
USB-C PD Quick Chargers & Adaptors, Power adapters...
Dimensions:
6.6 x 5.3 x 1 mm
more info
Description:400 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
400 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
31 A
Pulsed Drain Current:
60 A
Total Charge:
4.5 nC
Input Capacitance:
382 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
11 ns
Rise Time:
7.5 ns
Fall Time:
9 ns
Temperature operating range:
0 to +150 °C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Class-D Audio Amplifier
Dimensions:
11.67 x 9.9 mm
more info
Description:650 V Enhancement Mode GaN-on-Si Power Transistor
Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
65 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 ns
Turn-off Delay Time:
9.8 ns
Rise Time:
8.5 ns
Fall Time:
7.7 ns
Temperature operating range:
-55 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
AC-DC Converters, DC-DC Converters, Bridgeless Tot...
Dimensions:
9.2 x 7.8 mm
more info
Description:40 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.3 milli-ohm
Continous Drain Current:
69 A
Pulsed Drain Current:
409 A
Total Charge:
17.1 nC
Input Capacitance:
2178 pF
Output Capacitance:
1071 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High frequency DC-DC Converters, BLDC Motor Drives...
Dimensions:
2.85 x 3.25 mm
more info
Description:100 V Enhancement Mode GaN FET for Telecom Applications
Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
230 A
Total Charge:
9.2 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
wafer
Package:
WLCSP8
Applications:
High power density and high efficiency power conve...
Dimensions:
3.5 mm x 2.13 mm
more info
Description:650 V GaN Field Effect Transistor for Datacom Applications
Industry:
Automotive, Commercial, Industrial
Gate Threshold Voltage:
4 V
Drain Source Voltage:
650 V
Drain Source Resistance:
85 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
120 A
Total Charge:
9 nC
Input Capacitance:
638 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
43.4 ns
Turn-off Delay Time:
56 ns
Rise Time:
6.2 ns
Fall Time:
7.2 ns
Temperature operating range:
-55 to 150 Degree C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TOLT
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
Dimensions:
9.26 x 10 mm
more info
Description:650 V Enhancement Mode GaN-on-Silicon Power Transistor
Configuration:
Single
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
60 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
58 A
Total Charge:
60 nC
Input Capacitance:
225 pF
Output Capacitance:
70 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
5 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC-DC converters, DC-DC converters, BCM/DCM totem ...
Dimensions:
8 x 8 mm
more info
Description:650 V N-Channel Enhancement Mode GaN Transistor
Configuration:
Single
Gate Threshold Voltage:
1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
90 milli-ohm
Continous Drain Current:
16 A
Total Charge:
6.9 nC
Input Capacitance:
203 pF
Output Capacitance:
58 pF
Turn-on Delay Time:
2.4 ns
Turn-off Delay Time:
6.2 ns
Rise Time:
5.4 ns
Fall Time:
14.2 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Server Power Supplies, High-Frequency Converters, ...
Dimensions:
8 x 8 mm
more info
Description:650 V GaN HEMT for Charging Applications
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
180 milli-ohm
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN-22
Applications:
AC-DC Converters, Half Bridge topologies, LED ligh...
Dimensions:
5 x 7 x 0.8 mm
more info
Description:650 V GaN-on-Si Transistor for Wireless Power Applications
Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
65 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 ns
Turn-off Delay Time:
9.8 ns
Rise Time:
8.5 ns
Fall Time:
7.7 ns
Temperature operating range:
-55 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
AC-DC Converters, DC-DC Converters, Bridgeless Tot...
Dimensions:
11.0 x 9.0 mm
more info

What is a GaN Transistor?

A Gallium nitride (GaN) Power transistor is high electron mobility (HEMT) semiconductor device that consists of three terminals – gate, source, and drain. High electron mobility means that the GaN transistor has higher electric-field strength compared to silicon-based transistors. The GaN transistor offers benefits such as low on-state resistance, lower conduction losses, lower switching losses, high-frequency switching, high efficiency, small form factor, higher power density, and can withstand high temperature.

GaN transistors are ideal for use in consumer power supplies, multi-level converters, solar inverters, industrial motor drives, UPS, high voltage battery chargers, telecom, SMPS, totem pole PFC, high-frequency LLC, and enterprise and networking power applications.

Types of GaN Transistors

The GaN transistors are classified into two types - Enhancement mode GaN power transistor (e-GaN) and Depletion mode GaN power transistor (d-GaN).

Enhancement mode GaN Transistor: In enhancement mode, the GaN transistor is equivalent to the “Normally Open” switch (normally OFF). This means that when there is no voltage applied across the gate terminal, the GaN transistor does not conduct. It is turned on by applying positive gate-source voltage.

Depletion mode GaN Transistor: In this mode, the GaN transistor is equivalent to the “Normally closed” switch (normally ON). The mode indicates that the transistor is at an ON state at zero gate-source voltage. It is turned off by applying a negative voltage relative to the drain and source electrodes.

Key Specifications of GaN Transistors

Configuration of GaN transistor: The GaN transistors are available with different configurations – single, dual, and half-bridge.

Gate Threshold Voltage: It represents the minimum voltage that is applied between the gate and source terminal to make the GaN transistor turn ON. It is expressed in volts (V).

Drain source voltage: It denotes the maximum voltage that can be applied across drain and source terminals, after which the GaN enters an off state. It is expressed in volts (V).

Drain source resistance: It represents the drain to source on-state resistance and is usually measured in the milli-ohm range.

Continuous drain current: It is the maximum continuous drain current that the GaN transistor can handle and is expressed in Ampere (A).

Pulsed Drain Current: It is the maximum pulsed drain current that the GaN transistor can handle and is expressed in Ampere (A).

Total charge: It represents the total charge that is accumulated at the gate terminal. The gate charge value is used to find how fast a GaN Transistor switches from ON to OFF state, and vice-versa.

Turn-on Delay Time: It is the time required to charge the input capacitance of the GaN Transistor before the drain current conduction starts.

Turn-off Delay Time: It is the time interval at which the voltage across the gate and source terminal drops below 90 % when the drain current falls below load current.

Rise time: The time taken for the drain current to reach from 10% of its initial value to 90% of its final value.

Fall time: The time taken for the drain current to reach from 90% of its maximum value to 10% of its initial value.

GaN Transistors from the leading manufacturers are listed on everything PE. You can use the filters on the left side to narrow down on the list of products based on your requirements - Configuration, Gate Threshold Voltage, and other parameters. Our parametric search tool will scan multiple manufacturer websites to identify GaN Transistors that meet your requirement. You can then download datasheets, request quotations via everything PE. Your inquiry will be routed to the manufacturer or their representative who will give you more information on the product.

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