IGBTs

1915 IGBTs from 11 manufacturers listed on everything PE

IGBTs from the leading manufacturers are listed on everything PE. Narrow down on products based on type, number of transistors, package type etc. View product specifications, download datasheets and get pricing. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

Description:650 V ,Single Switch IGBT Module
Types:
Single Switch IGBT
Collector Emitter Voltage:
650 V
Gate Emitter Voltage :
20 V
DC Collector Current:
46 to 74 A
Peak Collector Current:
120 A
Power Dissipation:
125 to 250 W
Applications:
Solar converters, Uninterruptible power supplies, ...
more info
Description:650 V ,Single Switch IGBT Module
Types:
Single Switch IGBT
Collector Emitter Voltage:
650 V
Gate Emitter Voltage :
30 V
DC Collector Current:
48 to 80 A
Power Dissipation:
107 to 214 W
Applications:
Automotive, On & Off Board Chargers, DC-DC Convert...
more info
Description:600 V ,Single Switch IGBT Module
Types:
Single Switch IGBT
Collector Emitter Voltage:
600 V
Gate Emitter Voltage :
30 V
DC Collector Current:
30 to 60 A
Peak Collector Current:
180 A
Power Dissipation:
208.3 W
Applications:
Current resonance circuit
more info
Description:1200 V ,Single Switch IGBT Module
Types:
Single Switch IGBT
Collector Emitter Voltage:
1200 V
Gate Emitter Voltage :
20 V
DC Collector Current:
40 to 65 A
Power Dissipation:
220 W
Applications:
AC and DC motor control, Switched Mode Power Suppl...
more info
Description:382 to 442 V ,Single Switch IGBT Module
Types:
Single Switch IGBT
Collector Emitter Voltage:
382 to 442 V
Gate Emitter Voltage :
12 to 16 V
DC Collector Current:
20 to 40 A
Power Dissipation:
200 W
Applications:
AUTOMOTIVE IGNITION
more info
Description:1200 V Field Stop II Trench IGBT
Types:
Single Switch IGBT, Field Stop Trench IGBT
Collector Emitter Voltage:
1200 V
Gate Emitter Voltage :
20 V
DC Collector Current:
25 A
Peak Collector Current:
100 A
Power Dissipation:
261 W
Applications:
HEV/EV traction motors
more info
Description:600 V ,Half Bridge IGBT Module
Types:
Half Bridge IGBT
Collector Emitter Voltage:
600 V
Gate Emitter Voltage :
20 V
DC Collector Current:
288 to 379 A
Power Dissipation:
317 to 1250 W
Applications:
Solar converters, Uninterruptible power supplies
more info
Description:600 V ,Single Switch IGBT Module
Types:
Single Switch IGBT
Collector Emitter Voltage:
600 V
Gate Emitter Voltage :
25 V
DC Collector Current:
50 A
Power Dissipation:
100 to 200 W
Applications:
Dedicated to Current-Resonant Inverter Switching A...
more info
Description:1200 V Dual Switch IGBT Module
Types:
Dual Switch IGBT
Collector Emitter Voltage:
1200 V
Gate Emitter Voltage :
20 V
DC Collector Current:
800 A
Peak Collector Current:
1600 A
Power Dissipation:
6940 W
Applications:
Motor controllers, inverters, traction drives
more info
Description:600 V ,Single Switch IGBT Module
Types:
Single Switch IGBT
Collector Emitter Voltage:
600 V
DC Collector Current:
200 A
Power Dissipation:
462 W
more info

What is an IGBT?

IGBT or Insulated Gate Bipolar Transistor is a voltage-controlled semiconductor device that is designed for fast switching applications. It consists of three terminals – gate, collector, and emitter. An IGBT is a hybrid of BJT and MOSFET as its input side represents a MOSFET with a gate terminal and the output side represents a BJT with collector and emitter terminals.

IGBTs are ideal for low to medium power applications such as traction inverters for HEV/EV, auxiliary DC/AC converters, switched-mode power supplies, refrigerators, industrial motors, automotive main motor controllers to improve their efficiency traction motor control, induction heating, and power train systems requiring fast switching.

Key features of IGBT:

  • Low on-state voltage as compared to the BJT (bipolar junction transistor).
  • Lower switching losses.
  • Lower conduction losses.
  • Ease of gate drive.
  • Peak current capability.
  • Ruggedness.
  • Faster switching than BJT.

IGBTs can be classified into the following:

PT (Punch Through) – Punch-through IGBTs are those that have an n+ buffer layer. These IGBTs are used in inverter and chopper circuits and have symmetrical voltage blocking capabilities.

NPT (Non-Punch Through) – Non-punch through IGBTs are those that don’t have an n+ buffer layer. They are used in rectifier applications and have symmetric voltage blocking capabilities.

Symmetrical IGBTs - These IGBTs have equal forward and reverse breakdown voltage and are mostly used in AC circuits.

Asymmetrical IGBTs – These IGBTs have a reverse breakdown voltage less than the forward breakdown voltage. They are commonly used in DC circuits.

Key Specifications of IGBT

Collector-Emitter Voltage: It represents the voltage drop that occurs between the collector and the emitter terminals and is expressed in volts (V).

Saturated Collector-Emitter Voltage: It represents the maximum voltage drop that occurs between the collector and emitter terminals and is expressed in volts (V).

Gate Emitter Voltage: It represents the voltage drop that occurs between the gate and emitter terminals and is expressed in volts (V).

DC collector Current: It represents the amplified output current that flows through the collector terminal of an IGBT and is expressed in Ampere (A).

Peak Collector Current: It represents the maximum collector current that can be handled by the IGBT and is expressed in Ampere (A).

DC Forward Current: It represents the current that the diode part inside an IGBT requires to conduct at room temperature conditions. It is expressed in Ampere (A).

Peak Forward Current: It represents the maximum peak current that the diode inside an IGBT requires to conduct. It is expressed in Ampere (A).

Gate Emitter Leakage Current: It refers to the leakage current that occurs due to the voltage drop between the gate and emitter terminals.

Power dissipation (W): It represents power dissipated by the IGBT. It is equivalent to the product of collector current and collector-emitter voltage and is measured in Watts (W).

IGBTs from the leading manufacturers are listed on everything PE. You can use the filters on the left side to narrow down the list of products based on your requirements - type, number of transistors, package type, etc. Our parametric search tool will scan multiple manufacturer websites to identify IGBTs that meet your requirement. You can then download datasheets, request quotations via everything PE. Your inquiry will be routed to the manufacturer or their representative who will give you more information on the product.

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Collector Emitter Voltage (V)

Saturated Collector Emitter Voltage (V)

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DC Forward Current (A)

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Peak Forward Current (A)

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Gate Emitter Leakage Current (µA)

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Power Dissipation (W)

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