IGBTs

4,493 IGBTs from 34 manufacturers listed on everything PE

IGBT or Insulated Gate Bipolar Transistor is a type of power semiconductor device that combines the advantages of both the bipolar junction transistor (BJT) and the metal-oxide-semiconductor field-effect transistor (MOSFET). IGBTs from the leading manufacturers are listed on everything PE. Narrow down on products based on type, number of transistors, package type, etc. View product specifications, download datasheets and get pricing. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

4,493 IGBTs from 34 Manufacturers
4,493 Products from 34 Manufacturers
Page 1 of 299
750 V AEC-Q101 Qualified IGBT

Product Specs

Types:
Single Switch IGBT
Collector Emitter Voltage:
710 to 750 V
Peak Collector Current:
960 A
Industry:
Industrial, Commercial, Automotive
more info
1200 V Automotive-Qualified Field Stop Trench IGBT

Product Specs

Types:
Field Stop Trench IGBT
Collector Emitter Voltage:
1200 V
Gate Emitter Voltage :
-30 to 30 V
DC Collector Current:
105 A
Peak Collector Current:
120 A
Power Dissipation:
468 W
Applications:
HV heaters, Relay circuits (e.g. pre-charge relay)...
more info
600 V, Single Switch IGBT Module

Product Specs

Types:
Single Switch IGBT
Collector Emitter Voltage:
600 V
Gate Emitter Voltage :
-30 to 30 V
DC Collector Current:
20 A
Peak Collector Current:
100 A
Power Dissipation:
48 W
more info
1700 V IGBT Power Module

Product Specs

Types:
Dual Switch IGBT
Collector Emitter Voltage:
1700 V
Gate Emitter Voltage :
±20 V
DC Collector Current:
600 A
Peak Collector Current:
1200 A
Power Dissipation:
2272 W
Industry:
Industrial, Commercial
Applications:
Welding converters, Switched-mode power supplies, ...
more info
1600 V Trench Gate Field-Stop IGBT

Product Specs

Types:
Field Stop Trench IGBT
Collector Emitter Voltage:
1600 V
Gate Emitter Voltage :
-20 to 20 V
DC Collector Current:
55 to 85 A
Switching Speed:
143 to 376 ns
Power Dissipation:
395 W
Industry:
Industrial, Commercial
Applications:
Induction heating, Microwave ovens, Resonant conve...
more info
1200 V Automotive-Grade N-Channel IGBT

Product Specs

Types:
Field Stop Trench IGBT
Collector Emitter Voltage:
1200 V
Gate Emitter Voltage :
-20 to 20 V
DC Collector Current:
73 A
Peak Collector Current:
180 A
Power Dissipation:
287 W
Industry:
Automotive, Commercial, Industrial
Applications:
Automotive E-compressor, Automotive EV PTC Heater,...
more info
650 V, 1.46 to 2.3 V, 144 to 193 A, Half Bridge IGBT

Product Specs

Types:
Half Bridge IGBT
Collector Emitter Voltage:
650 V
Gate Emitter Voltage :
±20 V
DC Collector Current:
144 to 193 A
Peak Collector Current:
450 A
Switching Speed:
34 to 120 ns
Power Dissipation:
328 to 517 W
Industry:
Industrial, Commercial
Applications:
Optimized for high current inverter stages, Direct...
more info
650 V Silicon N-Channel Enhancement Mode IGBT for Welding Applications

Product Specs

Types:
Single Switch IGBT
Collector Emitter Voltage:
650 V
Gate Emitter Voltage :
25 V
DC Collector Current:
60 A
Peak Collector Current:
120 A
Power Dissipation:
200 W
Applications:
Power Factor Correction (PFC), Current-Resonant In...
more info
1200 V Field Stop Trench IGBT

Product Specs

Types:
Field Stop Trench IGBT, Half Bridge IGBT
Collector Emitter Voltage:
1200 V
Gate Emitter Voltage :
-20 to 20 V
DC Collector Current:
900 A
Peak Collector Current:
1800 A
Power Dissipation:
2900 W
Applications:
Motor Drives, Power Charging Equipment, Solar Powe...
more info
650 V, 30 to 60 A, Single Field Stop Trench IGBT

Product Specs

Types:
Field Stop Trench IGBT
Collector Emitter Voltage:
650 V
Gate Emitter Voltage :
±20 V
DC Collector Current:
30 to 60 A
Peak Collector Current:
90 A
Power Dissipation:
156 to 312 W
Industry:
Industrial, Commercial
Applications:
PFC, Solar converters, UPS, Welding Converters, Mi...
more info
1200 V Trench and Field Stop IGBT

Product Specs

Types:
Field Stop Trench IGBT
Collector Emitter Voltage:
1200 V
Gate Emitter Voltage :
±20 V
DC Collector Current:
40 to 80 A
Peak Collector Current:
120 A
Power Dissipation:
144 to 288 W
Industry:
Industrial, Commercial
Applications:
EV-Charging, String inverter, Uninterruptible powe...
more info
650 V Field-Stop Trench IGBT

Product Specs

Types:
Field Stop Trench IGBT
Collector Emitter Voltage:
650 V
Gate Emitter Voltage :
-20 to 20 V
DC Collector Current:
48 to 72 A
Peak Collector Current:
120 A
Switching Speed:
13 to 220 ns
Power Dissipation:
142 to 283 W
Industry:
Industrial, Commercial
Applications:
Power inverters, Uninterruptible Power Supply (UPS...
more info
1200 V Half Bridge IGBT Module

Product Specs

Types:
Half Bridge IGBT
Collector Emitter Voltage:
1200 V
Gate Emitter Voltage :
-20 to 20 V
DC Collector Current:
600 to 980 A
Peak Collector Current:
1200 A
Power Dissipation:
3330 W
Applications:
Hybrid Electrical Vehicles, Automotive Application...
more info
650 V Field Stop Trench Gate IGBT for SMPS Applications

Product Specs

Types:
Field Stop Trench IGBT
Collector Emitter Voltage:
650 V
Gate Emitter Voltage :
-30 to 30 V
DC Collector Current:
80 A
Peak Collector Current:
120 A
Power Dissipation:
300 W
Applications:
Switched-Mode Power Supplies (SMPS), Uninterruptib...
more info
700 V IGBT Module

Product Specs

Collector Emitter Voltage:
700 V
DC Collector Current:
800 A
more info

What is an IGBT?

An IGBT is a power semiconductor device that combines the gate-controlled input characteristics of a MOSFET with the low conduction loss of a bipolar transistor. It operates by using an insulated gate to control the formation of a conductive channel, which in turn enables carrier injection into the drift region to support high current flow at elevated voltages.

IGBTs are widely used in medium- to high-power conversion systems where efficient switching and high voltage blocking capability are required. Device behavior is governed by gate drive conditions, collector–emitter voltage stress, current handling capability, and thermal dissipation limits, all of which directly impact switching losses, reliability, and system efficiency.

Key Specifications

  • Types: Defines the structural or functional classification of the IGBT, which determines switching behavior, conduction characteristics, and application suitability.
  • Collector Emitter Voltage: Specifies the maximum voltage the device can block between the collector and emitter in the off-state, setting the upper limit for system operating voltage.
  • Gate Emitter Voltage: Indicates the allowable voltage range applied between the gate and emitter terminals, influencing gate drive design and safe operating conditions.
  • DC Collector Current: Represents the maximum continuous current the collector can conduct under steady-state conditions, affecting load capability and thermal performance.
  • Peak Collector Current: Defines the maximum allowable collector current for short-duration events, relevant to transient operating conditions and fault tolerance.
  • Power Dissipation: Specifies the maximum power the device can dissipate as heat, which is critical for thermal management and long-term reliability.

The Largest Database of IGBT

everything PE has listed IGBTs from the leading manufacturers and made them searchable by specification. You can enter the key parameters and the search tool will scan catalogs from the leading manufacturers to identify products that meet your spec. Once you find an IGBT that meets your requirement, you can view product information, download datasheets, or request quotations. Quotation requests will be routed to the manufacturer of the product, who will get back to you directly. The quotation will also be routed to distributors of the product in your region.

Filters

Manufacturers

No. of Transistors

More

Collector Emitter Voltage

Apply

Saturated Collector Emitter Voltage

Apply

Gate Emitter Voltage

Apply

DC Collector Current

Apply

Peak Collector Current

Apply

DC Forward Current

Apply

Peak Forward Current

Apply

Gate Emitter Leakage Current

Apply

Power Dissipation

Apply

Package Type