Picotest, a leader in custom test equipment for power integrity and systems testing, has just introduced a groundbreaking series of high-speed transient load current steppers. Leveraging an unprecedented level of Gallium Nitride (GaN) integration, these cutting-edge innovations are poised to redefine industry standards, particularly in demanding low-voltage, high-current applications across various sectors including data centers, AI, graphics, EV, ASICs, and servers.

The new load steppers from Picotest represent a significant advancement in power system testing technology, offering a range of capabilities designed to address critical challenges in power integrity testing.

Key features

• Utilization of GaN Technology: Picotest's load steppers incorporate GaN technology to achieve remarkable performance improvements. GaN FETs enable faster switching speeds and higher current densities compared to traditional silicon MOSFETs, resulting in enhanced efficiency and capability to handle high-current demands.
• Addressing Critical Challenges: These load steppers are specifically designed to meet the stringent requirements of power integrity testing, including swift load current transitions, high peak and average power, and adaptable form factors. They enable accurate verification and validation of power distribution networks (PDNs) through impedance and load step transient performance testing.
• Breakthrough Solutions: Picotest's innovative design overcomes limitations associated with traditional electronic loads, such as slow response times and excessive capacitance. By pushing the boundaries of GaN power density, integrating advanced cooling techniques, and employing high-speed digital control, Picotest has developed load steppers with unparalleled bandwidth, power/current capabilities, and form factors.

Key advantages of GaN Integration

• Extreme Speed: GaN technology offers significantly faster switching speeds due to higher electron mobility and wider bandgap compared to silicon. This enables precise and fast transient load conditions, crucial for assessing the performance and stability of power delivery systems under dynamic operating conditions.
• High Current Density: GaN FETs exhibit lower on-resistance per area compared to silicon MOSFETs, allowing for more efficient current conduction and higher current densities. This breakthrough enables the integration of ultra-fast GaN switches into compact footprints, providing unprecedented levels of GaN integration and scalability.
• Transformative Impact: Picotest's high-speed transient load current steppers represent a transformative moment in power systems testing. By introducing groundbreaking advancements in GaN integration and overcoming existing limitations, these innovations are set to redefine industry standards and drive advancements in critical sectors such as data centers, AI, graphics, EV, ASICs, and servers.