JEDEC Issues New Standards for Silicon Carbide Power Electronics

JEDEC Issues New Standards for Silicon Carbide Power Electronics

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, announced the publication of JEP203: Guideline for Short Circuit Evaluation in Power Conversion Transistors and JEP204: Catalog of Stress Procedures for Silicon Carbide Devices for Power Electronic Conversion, developed by JEDEC’s JC-70.2 Silicon Carbide Subcommittee. JEP203 and JEP204 are available for free download from the JEDEC website.

The two documents support the growing adoption of SiC power semiconductors. 

JEP203: Guideline for Short Circuit Evaluation in Power Conversion Transistors, provides guidance for evaluating short-circuit capability of power MOSFETs, helping engineers improve protection design, testing consistency, and system robustness in applications such as electric vehicles, industrial drives, and energy infrastructure.

JEP204: Catalog of Stress Procedures for Silicon Carbide Devices for Power Electronic Conversion, is a comprehensive reference covering reliability, environmental, and ruggedness stress procedures for SiC power devices. The publication gives qualification engineers and device manufacturers a common framework for evaluating long-term reliability and performance, helping accelerate industry alignment and increase confidence in next-generation power electronics.

“JEP203 and JEP204 are landmark guidelines for SiC power conversion, enabling the industry to confidently adopt silicon carbide in demanding power electronic applications. JEP204, in particular, provides a comprehensive framework of best practices for stressing SiC power devices, offering significant value to both users and suppliers. Together, these documents reflect years of industry collaboration and mark a historic milestone in advancing the reliability, safety, and standardization of SiC technology,” noted Dr. Donald Gajewski, Wolfspeed Senior Director Reliability Engineering, and the chair of the 702_1 Task Group.

“As the power electronics industry accelerates its transition to silicon carbide, standardization is the catalyst for confidence and scale. The release of JEP203 and JEP204 delivers exactly that: clear guidelines for short-circuit protection design and a unified stress-test framework for long-term SiC reliability. These new documents give engineers and manufacturers the tools to design safer systems, validate long-term reliability, and align industry practices,” said Dr. Thomas Aichinger, Senior Principal Engineer, SiC Technology Development, Infineon Technologies, and the vice-chair of the JC-70.2 subcommittee.

Click here to learn more about the role of SiC in Battery Energy Storage Systems.