Mitsubishi Electric has announced that it will begin sequentially shipping samples in late June of two types of new 5th-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC-MOSFETs) in bare die form. The new SiC-MOSFETs are designed for use in inverters for drive motors and eAxles1 of electric vehicles (EVs), plug-in hybrid vehicles (PHEVs), and other electrified vehicles (xEVs). They feature Mitsubishi Electric’s proprietary trench structure2 and achieve industry-leading3 low on-resistance4, approximately 25% lower5 than that of existing products.

The products are being displayed at PCIM Expo & Conference 2026 (June 9-11, Nuremberg, Germany) as well as exhibitions in Japan, China and other countries.

Mitsubishi Electric’s 5th-generation SiC-MOSFET bare dies will contribute to the performance and miniaturization of xEV inverters and eAxles, which will extend the range and improve the power efficiency of xEVs. In addition, the company’s proprietary manufacturing process technology suppresses performance degradation and fluctuations in power loss and on-resistance, ensuring stable quality even after long-term use, and contributing to the durability and performance of xEV inverters and eAxles.

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