SemiQ announces the release of its second-generation Silicon Carbide 1200 V 80 milliohm Power MOSFET modules developed in the industry-standard SOT-227 packages.
These 1200 V Silicon Carbide MOSFET Modules are the latest extension to our SiC MOSFET product portfolio. SemiQ’s SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles, power supplies, and data centers, and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy Silicon IGBTs, SemiQ’s MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight, and cooling requirements.
Michael Robinson, President and General Manager at SemiQ said “The SOT-227 package is one of the best fully Isolated Power Semiconductors Packages around. Combined with our SiC MOSFETs and SiC Diodes, these products are perfect for increasing efficiency in your Fast Charging and Inverters systems.”
40 milliohm and 20 milliohm modules in the SOT-227 are on the way.
Availability
Samples are in stock at SemiQ and available through DigiKey, Mouser, and Richardson Electronics.
Click here to learn more about GCMS080B120S1-E1
Click here to learn more about GCMX080B120S1-E1
