EPC Space features its 300 V eGan Power Transistor, FBG30N04C.EPC Space FSMD-C series of eGaN power switching HEMTs have been specifically designed for critical applications in high-reliability or commercial satellite space environments. These devices have exceptionally high electron mobility and a low-temperature coefficient resulting in very low R_DS(on) values. The lateral structure of the die provides for a very low gate charge (Q_G) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact packaging.

Key features of FBG30N04C

• Low R_DS(ON)
• Ultra-low Q_G for High Efficiency
• Logic Level
• Light Weight – 0.113 grams
• New Compact Hermetic Package
• Source Sense Pin
• Total Dose

           Rated to 300 krad

• Single Event

           SEE immunity for LET of  83.7 MeV/mg/cm² with V_DS up to 100% of rated Breakdown

• Low Dose Rate at 100 mRad/sec

          Maintains Pre-Rad specification

• Neutron

          Maintains Pre-Rad specification for up to 1 x 10¹³ Neutrons/cm²

Key applications of FBG30N04C

• Commercial Satellite EPS & Avionics
• Deep Space Probes
• High-Speed Rad Hard DC-DC Conversion
• Rad Hard Motor Controllers

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