EPC to Demonstrate High Power Density eGaN FETs and ICs at APEC 2023

EPC to Demonstrate High Power Density eGaN FETs and ICs at APEC 2023

EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, will be delivering multiple technical presentations at the premier power electronics conference; the IEEE Applied Power Electronics Conference and Exposition (APEC 2023) in Orlando from March 19th through the 23rd (see detailed schedule below).  In addition, the company will demonstrate the latest generation of eGaN® FETs and ICs in applications ranging from high-power density computing, eMobility, robotics, solar power, battery charging, and more in booth # 732 in the Orange County Convention Center.  Stop by to see the ‘Wall of GaN’ – the broadest portfolio of GaN power semiconductors in the market available for off-the-shelf delivery.

Attendees interested in meeting with EPC application experts during the event can schedule sessions in the EPC booth for a private meeting. Meeting requests can be submitted at calendly.com/epcc/apec-2023

Technical Presentations Featuring GaN FETs and Integrated Circuits by EPC Experts:

Tuesday, March 21st

  • Using Test to Fail Methodology to Accurately Predict How Enhancement Mode GaN Devices Can Last More than 25 Years in Solar Applications
    Presenter: Shengke Zhang, Ph.D.
     Schedule: 9:20 am – 9:45 am

Wednesday, March 22nd  

  • Power Steering Application Using eGaN® Integrated Circuit
    Presenter: Marco Palma
     Schedule: 8:30 am – 8:55 am
  • Exhibitor Seminar: GaN Roadmap Update
    Presenter: Alex Lidow, Ph.D.
     Schedule: 12:00 pm – 12:30 pm

Thursday, March 23rd

  • Dead Time Reduction Strategy for GaN-Based Low-Voltage Inverter in Motor Drive System
     Presenter: Vincenzo Barba, Politecnico di Tornio

Student Job Fair – Tuesday, March 21st 1:30 pm – 5:00 pm

Click here to see Everything PE's coverage of APEC 2023.

Click here to learn more about GaN based transistors.