Innoscience Technology, a pioneer in the design, development, and manufacture of reliable and high-performance GaN devices, has introduced a new line of discrete HEMTs operating at low voltages and packaged in FCQFN. The ‘flip chip’ configuration, which is rated at 40 V, 100 V, and 150 V, simplifies assembly for engineers. There are FCQFN devices rated at 40 V and measuring 4.3 mΩ in on-resistance (with a 3×4 mm chip dimension). RDS(on) values of 2.8 mΩ (3×5 mm) and 1.8 mΩ (4×6 mm) are provided for 100 V HEMTs, whereas the 150 V-rated components measuring 4×6 mm have RDS(on) values of 3.9 mΩ and 7 mΩ, respectively.
Utilizing the most recent GaN processes from Innoscience, the 40 V components exhibit exceptional performance, as evidenced by their best-in-class figure-of-merit (FOM) values for Qgg*Ron and Idss*Ron. Due to their low discharge and gate leakage currents, these components are suitable for direct-battery-connected applications and mobile markets. Laptop USB Type C buck-boost converters are an additional application. In addition, Innoscience’s most recent iteration of process ensures that epitaxy is subject to extremely precise regulation, resulting in a remarkably consistent threshold voltage and on-resistance, which in turn produce an exceptionally high wafer yield.
DC/DC conversion at power levels of up to 2 kW is feasible with 100 V devices owing to their exceptionally low on-resistance. When implemented in parallel, it is possible to attain power levels of up to 8 kW. The 150 V is designed with industrial applications, solar installations included, in mind. They are constructed to withstand extreme temperatures and pressures without requiring the industry-standard 80% derating (i.e., they are rated at 100% of their voltage). All new 40 V, 100 V, and 150 V HEMTs have passed testing in accordance with JEDEC and GaN-specific JEP 180 specifications.
Lastly, it is crucial to mention that the 1.8 mΩ 100 V HEMTs are pin-for-pin compatible with the new 3.9 mΩ and 7 mΩ 150 V components, owing to their packaging in FCQFN 4x6mm. This characteristic provides significant design adaptability.
Click here to learn more about LV GaN HEMT from Innoscience.
