Efficient Power Conversion Launches 50 V GaN FET for High Power Density USB-C PD Applications

Efficient Power Conversion Launches 50 V GaN FET for High Power Density USB-C PD Applications

EPC, a world leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057. This GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.

Key features and benefits

  • High Efficiency: The new 50 V GaN FET boasts an ultra-low on-resistance of just 8.5 mΩ, significantly reducing power losses and enhancing overall efficiency.
  • High Efficiency: Its tiny footprint makes it ideal for space-constrained applications, allowing for smaller, more efficient power adapters and chargers.
  • Fast Switching: The GaN technology enables faster switching speeds, improving power density and reducing the size of passive components, leading to more compact and lightweight designs.

“As USB-C PD continues to gain traction, efficient, compact, high-performance power solutions are vital. Our new GaN FET meets these needs with a reliable, efficient solution that enhances performance,” said Alex Lidow, EPC CEO and co-founder.

Industry Impact

With the increasing adoption of USB-C PD, there is a growing demand for power components that can deliver higher efficiency and performance while minimizing size and heat generation. EPC’s new GaN FET is designed to meet this demand, offering a superior alternative to traditional silicon-based FETs.

Development Board

The EPC90155 development board is a half bridge featuring the EPC2057 GaN FET. It is designed for 40 V maximum operating voltage and 10 A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.