SemiQ Introduces 1700 V SiC Schottky Discretes and Dual Diode Modules at PCIM 2024

SemiQ Introduces 1700 V SiC Schottky Discretes and Dual Diode Modules at PCIM 2024

SemiQ, a provider of high-quality, efficient standard, and custom silicon carbide (SiC) power semiconductors for high-voltage applications has announced the addition of 1700 V SiC Schottky discrete diodes and dual diode packs to its QSiC product line. The new devices meet the size and power demands of a wide range of demanding applications including switched-mode power supplies, uninterruptible power supplies (UPS), induction heaters, welding equipment, DC/DC converters, solar inverters, and electric vehicle (EV) charging stations.

Featuring zero reverse recovery current and near-zero switching loss, SemiQ’s 1700V SiC Schottky diode technologies offer enhanced thermal management that reduces the need for cooling. As a result, engineers can implement highly efficient, high-performance designs that minimize system heat dissipation, allow the use of smaller heatsinks, and lead to cost and space savings. All of the new products support fast switching across operating junction temperatures (Tj) of -55 °C to 175 °C.

The GP3D050B170X (bare die) and GP3D050B170B (TO-247-2L package) discrete diode are rated for respective maximum forward currents of 110 A and 151 A. Device design supports easy parallel configurations, enhancing flexibility and scalability for various power applications.

The GHXS050B170S-D3 and GHXS100B170S-D3 dual diode packs are rugged modules supplied in a SOT-227 package. Maximum respective forward currents are 110 A and 214 A and each combines outstanding performance at high frequencies with low loss and low EMI operation. Ensure energy efficiency and reliability by minimizing interference. Key features include low stray inductance, high junction temperature operation, rugged and easy mounting, and an internally isolated package (AIN), which provides optimal insulation and thermal conductivity. Low junction-to-case thermal resistance enables efficient heat dissipation, ensuring stability under high-power conditions. The modules can be easily connected in parallel due to the positive temperature coefficient (Tc) of the forward voltage (Vf).

“Our new 1700 V SiC diodes represent a leap forward in power efficiency and reliability,” said Dr. Timothy Han, President at SemiQ. “With their compact and flexible design, low-loss operation, and superior thermal management, our QSiC diodes will enable our customers to create innovative, high-performance solutions while reducing costs and improving overall system efficiency.”

All parts have been tested at voltages exceeding 1870 V and have undergone avalanche testing up to 1250 mJ. Visitors to SemiQ’s stand at Alfatec’s booth (Hall 7, 418) at PCIM Europe will have the first opportunity to explore the new 1700 V SiC diodes.


  • Country: United States
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