Mitsubishi Electric announced that it has begun shipping low-current 3.3 kV/400 A and 3.3 kV/200 A versions of a Schottky barrier diode (SBD) embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module for large industrial equipment, including rolling stock and electric power systems. Together with the existing 3.3 kV/800 A version, the newly named Unifull series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment.

Mitsubishi Electric's SBD-embedded SiC-MOSFET modules, including the 3.3 kV/800 A version released on March 29, feature an optimized package structure to reduce switching loss and improve SiC performance. Compared to existing power modules, Unifull modules, significantly reduce switching loss and contribute to higher power output and efficiency in large industrial equipment, making them suitable for auxiliary power supplies in railcars and drive systems with relatively small capacities.