Power Master Semiconductor has launched the second generation of the 1200 V eSiC MOSFET to fulfill the demands for increased efficiency, high power density, strong reliability, and durability in a range of applications including DC EV charging stations, solar inverters, energy storage systems (ESS), motor drives, and industrial power supplies.
The 1200 V eSiC MOSFETs provide notable benefits to the system, including increased power density, improved efficiency, and reduced cooling requirements as a result of their significantly lower power losses. SiC MOSFETs are becoming increasingly popular, particularly for renewable energy systems and EV charging systems that demand increased power density, efficiency, and resilience. The DC EV charging station is a level-3 charger that increases its power level through modular construction to meet the demand for quicker charging times and bigger battery capacities of electric vehicles. DC EV charging offers a consistent current output that covers a wide range of DC output voltages (200 V to 900 V) and load profiles.
The second generation of 1200 V eSiC MOSFET has enhanced key figures of merit (FOM) including gate charge (QG), stored energy in output capacitance (EOSS), reverse recovery charge (QRR), and output charge (QOSS) by up to 30% compared to the previous generation. The latest SiC MOSFET technology has notable benefits for power conversion applications, including reduced power losses, resulting in smaller, lighter, and more efficient systems that require less cooling.
The 1200 V eSiC MOSFET Gen2 provides exceptional switching performance and has been thoroughly tested for its avalanche capability. By significantly reducing the miller capacitance, the latest iteration achieved a remarkable 44% decrease in switching loss compared to its predecessor.
Power Master Semiconductor affirms its unwavering dedication to the advancement of state-of-the-art power device solutions that prioritize both efficiency and sustainability. The advent of this new generation of 1200 V e SiC MOSFET represents a significant advancement in enabling the creation of environmentally friendly and highly efficient power systems. Power Master Semiconductor expresses strong confidence in the significant impact that the 1200 V eSiC Gen2 MOSFET will have on high-performance applications.
