MCC Semi expands its advanced silicon carbide portfolio with six new 650 V SiC MOSFETs. Designed for demanding applications, these components boast high-voltage capability and an on-resistance range of 25 mΩ to 100 mΩ. They’re also equipped with avalanche ruggedness, low switching losses, and enable high-speed switching with a low gate charge.
Their efficiency-boosting design and TO247 package deliver superior thermal performance, while the 3-pin or 4-pin (Kelvin-source pin) options enhance their versatility.
MCC's new MOSFETs minimize losses without compromising power handling, making them an intelligent choice for various industrial and telecommunications systems.
Key features and benefits
- High switching speed with low gate charge
- Low switching losses
- Wide on-resistance selection ranging from 25 mΩ to 100 mΩ
- Avalanche ruggedness for enhanced durability
- TO247 3-pin and 4-pin package options
- Kelvin-source connection for precision (4-pin only)
Key applications
- Telecommunications
- UPS Systems
- Renewable Energy
- Power Supplies
