Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has introduced four of its GaN-on-Silicon enhancement mode high electron mobility transistors (HEMT) in its En-FCQFN top-side cooling package, resulting in significant benefits in thermal performance. For example, at 30 A, the junction temperature in the top-side cooling package is reduced from 52.2 °C for bottom-side cooling package types to 39.6 °C, a 25% improvement.

The four power GaN transistors newly released in the En-FCQFN top-side cooling package include the 100 V INN100EQ 016A/1.8mΩ and 025A/2.8mΩ parts, as well as the 150 V INN150EQ 032A/3.9mΩ and 070A/7.0mΩ devices. The pinout is compatible with bottom-side cooling package parts, and the new devices also retain the characteristics of all Innoscience parts: low resistance; low gate charge; low switching loss; extremely low reverse recovery charge; and excellent efficiency performance.

Dr. Denis Marcon, General Manager, Innoscience Europe comments: “Due to their excellent electrical properties and ultra-miniaturized packaging, our medium and low voltage GaN parts have found broad acceptance, especially in data centers, photovoltaic and energy storage systems, motor drives and power supplies for communications. The new En-FCQFN top-side cooling packaging which optimizes thermal management, further limits system temperature rise, widening the potential market.”

Innoscience's 100 V~150 V GaN series are also available in WLCSP, FCQFN, LGA and other packaging types, covering different on-resistances and application areas. Together with these devices, the new top-side cooling package En-FCQFN parts are available in mass-production volumes.

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