Onsemi has unveiled the AFGH4L60T120RWD-STD, an advanced N-Channel IGBT with Field Stop VII (FS7) technology. This cutting-edge device incorporates the 7th-generation trench IGBT and diode technology, housed in a TO247 4-lead package. Designed for high-performance automotive applications, it offers superior efficiency, robust design, and compliance with stringent industry standards.

Key Features of AFGH4L60T120RWD-STD

• Trench with Field Stop Technology: Ensures high efficiency and reduced switching losses.
• Wide Operating Temperature: Maximum junction temperature of 175°C, ideal for demanding environments.
• Short Circuit Rating: Low saturation voltage and a robust design to handle high current surges.
• AEC-Q101 Qualification: Automotive-grade reliability with PPAP available upon request.
• Eco-Friendly Compliance: RoHS-compliant, Pb-free, halogen-free, and BFR-free.

Applications of AFGH4L60T120RWD-STD 

This IGBT is optimized for use in automotive electric compressors, automotive EV PTC heaters and On-Board Chargers (OBC).

Performance Specifications

• Voltage Ratings:
  • Collector-to-Emitter Voltage (V_CE): 1200 V
  • Gate-to-Emitter Voltage (V_GE): ±20 V (±30 V transient)
• Current Ratings:
  • Collector Current (IC): Up to 73 A at 25°C, 60 A at 100°C
  • Pulsed Collector Current (ICM): 180 A
  • Diode Forward Current (IF): 84 A at 25°C
• Power Dissipation: 287 W at 25°C, 114 W at 100°C
• Short Circuit Withstand Time: 6 µs at V_GE = 15 V and V_CC = 800 V
• Operating Temperature Range: -55°C to +175°C

Click here to learn more about AFGH4L60T120RWD-STD 

Click here to learn more about IGBTs on everything PE.