Innoscience stands out as the world’s largest 8-inch GaN-focused Integrated Device Manufacturer (IDM), uniquely positioned with full control over its global GaN-on-Silicon production capacity. With support for a broad voltage range from 15V to 900V, Innoscience delivers highly reliable and cost-effective GaN devices that serve diverse sectors—including consumer electronics, automotive, and data infrastructure. Their large-scale manufacturing capabilities ensure strong performance, supply security, and competitive pricing, while collaborations with customers and partners continue to accelerate the adoption of GaN-based systems.

Founded in 2015 and headquartered in Suzhou, China, InnoScience is a pioneer in GaN-on-Si power solutions, specializing exclusively in gallium nitride-based technology. By owning and operating advanced in-house epitaxy, process, and device capabilities on 8-inch wafers, the company delivers cost-effective, high-performance GaN HEMTs (High-Electron Mobility Transistors) across a wide voltage spectrum, enabling next-generation innovation in power electronics.

Industries

InnoScience’s GaN products serve a broad spectrum of markets:

• Consumer Electronics: InnoScience's GaN devices allow chargers and adapters to become significantly smaller and more energy-efficient, supporting fast-charging needs across smartphones, laptops, and other portable devices. The company’s wide voltage range enables seamless integration into high-frequency power supplies.
• Automotive & LIDAR: InnoScience offers automotive-grade GaN components optimized for LIDAR, onboard chargers (OBC), and DC-DC converters, helping reduce size and power loss in EV systems. InnoScience’s GaN technology simplifies battery management systems (BMS) by replacing traditional dual silicon NMOS with a single InnoGaN™ device, enhancing system efficiency and reducing cost and complexity. Their GaN switches enable high-speed, compact power delivery systems suitable for modern electric vehicles.
• Data Centers & Telecommunications: GaN technology from InnoScience supports high-density power conversion in server farms and telecom infrastructure, delivering improved efficiency and thermal performance. The devices are ideal for 48V rack systems, enabling smaller, cooler, and more reliable power modules.
• Renewable Energy & Industrial: InnoScience GaN solutions enhance the performance of solar inverters, motor drives, and other industrial power applications by reducing switching losses and system complexity. Their technology supports robust, space-efficient power systems suited for harsh and high-power environments.

Products

HV and LV GaN HEMTs (15 V–1200 V) – InnoScience offers a comprehensive range of enhancement-mode GaN HEMTs spanning both low and high voltage applications. These devices deliver superior switching performance, low RDS(on), and high thermal efficiency, making them ideal for compact, high-power-density designs in chargers, adapters, and industrial supplies.

VGaN (Bi-directional GaN ICs) – InnoScience’s VGaN technology integrates gate drive and logic with a bi-directional GaN power switch, offering a single-chip replacement for back-to-back MOSFETs. These are widely used in over-voltage protection, load switching, and fast-charging smartphone ports where space and speed are critical. 

SolidGaN & GaN Driver ICs – SolidGaN from InnoScience integrates high-voltage GaN FETs with gate drivers in a compact package, simplifying PCB design and minimizing external components. These half-bridge ICs are especially useful in 48 V systems such as server power supplies, telecom converters, and solar inverters, offering excellent power density and high-frequency operation. 

Full GaN Power Supplies & Reference Designs – InnoScience provides a wide array of full GaN-based reference designs, including ultra-compact chargers (33 W to 300 W), PD3.1 adapters (140 W to 240 W), and high-efficiency LED drivers and TV power supplies. These designs highlight the performance benefits of InnoScience’s GaN devices and help customers accelerate time-to-market with proven, high-efficiency solutions. 

Innoscience's GaN Technology

• 8-inch GaN-on-Si Epitaxy: High-quality epitaxial growth with low defect density and excellent wafer uniformity for scalable production.
• 8-inch GaN-on-Si Process Technology: Silicon-compatible process using mature semiconductor tools, ensuring high throughput and lower costs.
• 8-inch GaN-on-Si Device Technology: Enhancement-mode GaN HEMTs with optimized performance, featuring innovations like strain engineering for lower on-resistance and stable dynamic behavior.

Partnerships

InnoScience has forged strong global alliances to expand its reach. In May 2022, it signed a worldwide distribution agreement with WPG Holdings, the world’s largest semiconductor distributor, ensuring broad access to its high- and low-voltage GaN HEMTs. Further strengthening its global footprint, the company launched design and sales centers in the USA (Santa Clara), Europe (Leuven), and Korea (Gwangmyeong) to provide localized technical support and customer service.

Conclusion

With mass-production capabilities, deep R&D expertise, and expanding international infrastructure, InnoScience leads the charge in third-generation power semiconductors. Its versatile GaN portfolio—spanning discrete transistors, bi-directional ICs, driver solutions, and full reference designs—empowers engineers to build more compact, efficient, and robust systems. Supported by strategic global distribution and localized support hubs, InnoScience is positioned to accelerate GaN adoption across consumer electronics, automotive, industrial, data center, and renewable energy sectors.

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