MCC introduces the MIUZ100R12GJTL-BP, a high-performance 1200V, 100A IGBT module purpose-built for applications requiring both high voltage and high current handling. Its low VCE(sat) of 2.2V at 150°C ensures minimal conduction loss, while the advanced device structure keeps switching losses low for efficient operation even under heavy loads.
The robust, SOT-227 compatible GJ package features an isolated copper baseplate with Direct Bonded Copper (DBC) technology, providing excellent thermal management and isolation. With a junction-to-case thermal resistance of just 0. K/W and support for operating junction temperatures up to 175°C, this module is ideal for systems where efficiency, compactness, and long-term reliability are critical.
Beyond its electrical advantages, the MIUZ100R12GJTL-BP is optimized for seamless system integration and operational stability. Low inductance reduces voltage overshoot during switching, while the construction ensures effective heat dissipation for consistent performance in space-constrained or high-temperature environments. The positive temperature coefficient of VCE(sat) simplifies parallel operation, further enhancing reliability in demanding industrial, power conversion, and renewable energy applications.
Features & Benefits:
- Low inductance for improved switching performance
- Low switching losses for higher efficiency
- Isolated copper baseplate using DBC (Direct Bonded Copper) technology for superior heat dissipation
- High operating junction temperature ≤175°C for robust thermal stability
- VCE(sat) with a positive temperature coefficient, enabling easier and safer parallel operation
- Compact GJ package compatible with SOT-227
- High efficiency
- Reliable thermal management
- Compact integration
- Enhanced system reliability
Applications
The MIUZ100R12GJTL-BP is optimized for industries and systems requiring high power density, efficiency, and long-term reliability, including:
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