The DGD28225FN-7 from Diodes Incorporated is a High-Frequency Gate Driver IC that is ideal for multi-phase DC-DC converters with digital control, synchronous rectification for isolated point of load, and wireless charging transmitter applications. It requires an input voltage of 4.5-6 V. This gate driver is capable of driving two N-channel MOSFETs in a half-bridge configuration. It consists of an internal bootstrap diode, and the floating high-side driver is rated up to 30 V in a bootstrap configuration. This gate driver has an under-voltage lockout (UVLO) mechanism for both the low- and high-side to protect MOSFETs from loss of supply. It can withstand high junction temperature, and the diode’s epoxy material meets the UL 94 V-0 flammability rating requirement with moisture sensitivity level 1. This RoHS-compliant driver IC is available in a surface-mount package that measures 3.05 x 3.05 x 0.63 mm.