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BM60213FV-C Image

The BM60213FV-C from ROHM Semiconductor is an Automotive Qualified High and Low Side Drive IC that is ideal for MOSFET gate driver and IGBT gate driver applications. It requires an input voltage of 10 - 24 V and provides a peak output current of up to 5 A. This gate driver is an optimal solution for driving N-channel power MOSFETs and IGBTs in a variety of applications, offering a flawless operation at voltages of up to 1200 V. It delivers reliable and efficient power based on the bootstrap operation. This AEC-Q100-qualified gate driver features seamless voltage boosting to provide effortless drive signals for power MOSFETs and IGBTs. It delivers exceptional protection for the circuitry through its built-in under voltage lockout (UVLO) function, which actively monitors the input voltage to ensure reliable performance. This gate driver is available in a surface-mount package that measures 6.5 x 8.1 x 1.7 mm.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
    ROHM Semiconductor
  • Description
    Automotive Qualified High and Low-Side Gate Driver IC


  • Types of Gate Driver
    Dual Channel Gate Driver
  • Technology
  • Configuration
  • No of Drivers
  • Number of Outputs
  • Input Voltage
    10 to 24 V
  • Output Voltage
    0.3 to 30 V
  • Output Current
    5 A
  • Rise Time
    50 ns
  • Fall Time
    50 ns
  • Temperature operating range
    -40 to 125 Degree C
  • RoHS Compliant
  • Qualification
  • Industry
  • Package Type
    Surface Mount
  • Package
  • Dimensions
    6.5 x 8.1 x 1.7 mm
  • Applications
    MOSFET Gate Driver, IGBT Gate Driver

Technical Documents