The AOT10B65MQ2 from Alpha & Omega Semiconductor is an Insulated Gate Bipolar Transistor. It has a collector-emitter breakdown voltage of over 650 V, a gate-emitter threshold voltage of 5.1 V, and a saturated collector-emitter voltage of 1.6 V. This Insulated Gate Bipolar Transistor (IGBT) has a continuous collector current of 10-20 A and a peak collector current of less than 30 A. It has a gate-emitter leakage current of ±100 nA and features low collector-emitter saturation voltage, contributing to low turn-off switching loss and controlled turn-on di/dt transients. It is based on AOS' AlphaIGBT (α IGBT) technology and integrates a soft and fast recovery anti-parallel diode. This IGBT offers lower EMI emissions. It is available in a through-hole package that measures 10.03 x 28.3 x 4.45 mm and is ideal for motor drives, sewing machines, home appliances, fans, pumps, vacuum cleaners, and other hard-switching applications.